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| KSA473 KSA473 Low Frequency Power Amplifier Power Regulator * Collector Current : IC= -3A * Collector Dissipation : PC = 10W (TC=25C) * Complement to KSC1173 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Ratings - 30 - 30 -5 -3 10 150 - 55 ~ 150 Units V V V A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = - 500A, IE = 0 IC = - 10mA, IB = 0 IE = - 1mA, IC = 0 VCB = - 20V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 2.5A IC = - 2A, IB = - 0.2A VCE = - 2V, IC = - 0.5A VCE= - 2V, IC = - 0.5A VCB = - 10V, IE = 0, f = 1MHz 70 25 - 0.3 - 0.75 100 40 Min. - 30 - 30 -5 - 1.0 - 1.0 240 - 0.8 - 1.0 V V MHz pF Typ. Max. Units V V V A A hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSA473 Typical Characteristics -3.2 1000 -2.8 IC[A], COLLECTOR CURRENT IB = -40mA IB = -35mA IB = -30mA VCE = -2V -2.4 hFE, DC CURRENT GAIN -8 -9 -10 IB = -25mA IB = -20mA IB = -15mA IB = -10mA -2.0 100 -1.6 -1.2 10 -0.8 IB = -5mA -0.4 IB = -3mA -0 -1 -2 -3 -4 -5 -6 -7 1 -0.01 -0.0 -0.1 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -3.6 IC = 10 IB -3.2 VCE = -2V IC[A], COLLECTOR CURRENT -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 -1 VBE(sat) -0.1 V CE(sat) -0.01 -0.01 -0.1 -1 -10 -0.0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 1000 -10 f=1MHz IE=0 IC MAX. (Pulse) *1ms IC[A], COLLECTOR CURRENT IC MAX. (DC) *10ms Thermal limitation Cob[pF], CAPACITANCE 100 *50ms TC =25 -1 10 S/B limitation * Single Pulse TC =25 -0.1 1 -1 -10 -100 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE V CE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Safe Operating Area (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSA473 Typical Characteristics (Continued) 20 PC[W], POWER DISSIPATION 15 10 5 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 7. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSA473 Package Demensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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